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TSM4NC60CI датащи(PDF) 3 Page - Taiwan Semiconductor Company, Ltd

номер детали TSM4NC60CI
подробное описание детали  Advanced planar process
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производитель  TSC [Taiwan Semiconductor Company, Ltd]
домашняя страница  http://www.taiwansemi.com
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TSM4NC60CI датащи(HTML) 3 Page - Taiwan Semiconductor Company, Ltd

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TSM4NC60CI
Taiwan Semiconductor
3
Version: A1606
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate-Source Voltage vs. Gate Charge
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-Source Voltage
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
Qg, Gate Charge (nC)
TJ, Junction Temperature (°C)
VGS, Gate to Source Voltage (V)
0
0.5
1
1.5
2
2.5
3
-75
-50
-25
0
25
50
75
100
125
150
V
GS=10V
I
D=1.3A
0
2
4
6
8
10
0
5
10
15
20
V
DS=480V
I
D=2.5A
0
1
2
3
4
0
2
4
6
8
25℃
-55℃
150℃
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
V
GS=10V
V
GS=9V
V
GS=8V
V
GS=7V
V
GS=6V
V
GS=5V
V
GS=4V
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
V
GS=10V
0
0.5
1
1.5
2
2.5
3
5
6
7
8
9
10
I
D=1.3A


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