поискавой системы для электроныых деталей |
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IRFG6110 датащи(PDF) 1 Page - International Rectifier |
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IRFG6110 датащи(HTML) 1 Page - International Rectifier |
1 / 12 page Absolute Maximum Ratings (Per Die) Parameter N-Channel P-Channel Units ID @ VGS =± 10V, TC = 25°C Continuous Drain Current 1.0 -0.75 ID @ VGS =± 10V, TC = 100°C Continuous Drain Current 0.6 -0.5 IDM Pulsed Drain Current ➀ 4.0 -3.0 PD @ TC = 25°C Max. Power Dissipation 1.4 1.4 W Linear Derating Factor 0.011 0.011 W/°C VGS Gate-to-Source Voltage ±20 ±20 V EAS Single Pulse Avalanche Energy 75 ➁ 75 ➄ mJ IAR Avalanche Current ➀ —— A EAR Repetitive Avalanche Energy ➀ —— mJ dv/dt Peak Diode Recovery dv/dt 5.5 ➂ -5.5 ➅ V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.63 in./1.6 mm from case for 10s) Weight 1.3 (Typical) g oC A 04/16/02 www.irf.com 1 Product Summary Part Number RDS(on) ID CHANNEL IRFG6110 0.7 Ω 1.0A N IRFG6110 1.4 Ω -0.75A P For footnotes refer to the last page MO-036AB PD - 90436F IRFG6110 JANTX2N7336 JANTXV2N7336 REF:MIL-PRF-19500/598 100V, Combination 2N-2P-CHANNEL HEXFET ® MOSFETTECHNOLOGY POWER MOSFET THRU-HOLE (MO-036AB) HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resis- tance combined with high transconductance. HEXFET tran- sistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switch- ing power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. Features: n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Electrically Isolated n Dynamic dv/dt Rating n Light-weight |
Аналогичный номер детали - IRFG6110 |
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Аналогичное описание - IRFG6110 |
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