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TC554161AFTI-85L датащи(PDF) 3 Page - Toshiba Semiconductor

номер детали TC554161AFTI-85L
подробное описание детали  TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC554161AFTI-85L датащи(HTML) 3 Page - Toshiba Semiconductor

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TC554161AFTI-70,-85,-10,-70L,-85L,-10L
2001-08-17
3/10
DC RECOMMENDED OPERATING CONDITIONS (Ta
==== ----40° to 85°C)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
VDD
Power Supply Voltage
4.5
5.0
5.5
V
VIH
Input High Voltage
2.4
¾
VDD + 0.3
V
VIL
Input Low Voltage
-0.3*
¾
0.6
V
VDH
Data Retention Supply Voltage
2.0
¾
5.5
V
*:
-3.0V when measured at a pulse width of 30 ns
DC CHARACTERISTICS (Ta
==== ----40° to 85°C, VDD ==== 5 V ±±±± 10%)
SYMBOL
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
IIL
Input Leakage
Current
VIN = 0 V~VDD
¾
¾
±1.0
mA
ILO
Output Leakage
Current
CE
= VIH or R/W = VIL or OE = VIH, VOUT = 0 V~VDD
¾
¾
±1.0
mA
IOH
Output High Current
VOH = 2.4 V
-1.0
¾
¾
mA
IOL
Output Low Current
VOL = 0.4 V
2.1
¾
¾
mA
tcycle = 70 ns
¾
¾
110
tcycle = 85 ns, 100 ns
¾
¾
100
IDDO1
CE
= VIL and R/W = VIH,
IOUT = 0 mA,
Other Input
= VIH/VIL
tcycle = 1 ms
¾
15
¾
mA
tcycle = 70 ns
¾
¾
100
tcycle = 85 ns, 100 ns
¾
¾
90
IDDO2
Operating Current
CE
= 0.2 V and R/W = VDD - 0.2 V,
IOUT = 0 mA,
Other Input
= VDD - 0.2 V/0.2 V
tcycle = 1 ms
¾
10
¾
mA
IDDS1
CE
= VIH
¾
¾
3
mA
Ta
= 25°C
¾
2
¾
-70,-85,-10
Ta
= -40~85°C
¾
¾
200
Ta
= 25°C
¾
2
5
IDDS2
Standby Current
CE
= VDD - 0.2 V,
VDD = 2.0 V~5.5 V
-70L,-85L,-10L
Ta
= -40~85°C
¾
¾
100
mA
CAPACITANCE (Ta
==== 25°C, f ==== 1 MHz)
SYMBOL
PARAMETER
TEST CONDITION
MAX
UNIT
CIN
Input Capacitance
VIN = GND
10
pF
COUT
Output Capacitance
VOUT = GND
10
pF
Note:
This parameter is periodically sampled and is not 100% tested.


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