SI4802DY datasheet(2/4 Pages) VISHAY

номер детали	SI4802DY

подробное описание детали	N-Channel 30-V (D-S) MOSFET

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Si4802DY

Vishay Siliconix

www.vishay.com

2-2

Document Number: 71114

S-03951—Rev. B, 26-May-03

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.8

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 24 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 24 V, VGS = 0 V, TJ = 55_C

5

mA

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

20

A

Drain-Source On-State Resistancea

rDS(on)

VGS = 10 V, ID = 8.4 A

0.018

0.022

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 7.2 A

0.024

0.030

W

Forward Transconductancea

gfs

VDS = 15 V, ID = 8.4 A

22

S

Diode Forward Voltagea

VSD

IS = 2.1 A, VGS = 0 V

0.8

1.2

V

Dynamicb

Total Gate Charge

Qg

13

20

Gate-Source Charge

Qgs

VDS = 15 V, VGS = 10 V, ID = 8.4 A

2

nC

Gate-Drain Charge

Qgd

2.7

Gate Resistance

Rg

0.5

3.2

W

Turn-On Delay Time

td(on)

8

16

Rise Time

tr

VDD = 15 V, RL = 15 W

10

20

Turn-Off Delay Time

td(off)

VDD = 15 V, RL = 15 W

ID ^ 1 A, VGEN = 10 V, RG = 6 W

21

40

ns

Fall Time

tf

10

20

Source-Drain Reverse Recovery Time

trr

IF = 2.1 A, di/dt = 100 A/ms

40

80

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 10 thru 4 V

TC = 125_C

-55

_C

2 V

25

_C

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

3 V

Аналогичный номер детали - SI4802DY

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	SI4800	254Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-13 July 2001
Vishay Siliconix	SI4800BDY	252Kb / 9P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. H, 29-Dec-08
	SI4800BDY	252Kb / 9P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. H, 29-Dec-08
	Si4800BDY	185Kb / 8P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. H, 29-Dec-08
	SI4800BDY	184Kb / 8P	N-Channel Reduced Qg, Fast Switching MOSFET 01-Jan-2022

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Аналогичное описание - SI4802DY

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI3456DV	61Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. B, 23-Nov-98
	SUU50N03-12P	60Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. A, 15-Sep-03
	SI4894DY	129Kb / 3P	N-Channel 30-V (D-S) MOSFET 17-May-04
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	SI4892DY	71Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. F, 01-Aug-05
Vaishali Semiconductor	SI4356ADY	143Kb / 3P	N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SIRA00DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA04DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
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Аналогичный номер детали - SI4802DY

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