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FDS6676S датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS6676S датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page FDS6676S Rev F1 (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25 °C 21 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA IGSSF Gate–Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –16 V, VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.4 3 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 1 mA, Referenced to 25 °C –3.8 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 14.5 A VGS = 4.5 V, ID = 13.2 A VGS=10 V, ID =14.5A, TJ=125 °C 5.25 6.0 8.0 7.5 9.0 12 m Ω ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 50 A gFS Forward Transconductance VDS = 10 V, ID = 14.5 A 80 S Dynamic Characteristics Ciss Input Capacitance 4665 pF Coss Output Capacitance 826 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 304 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.4 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 11 20 ns tr Turn–On Rise Time 10 20 ns td(off) Turn–Off Delay Time 82 131 ns tf Turn–Off Fall Time VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 30 48 ns Qg Total Gate Charge 43 60 nC Qgs Gate–Source Charge 10 nC Qgd Gate–Drain Charge VDS = 15 V, ID = 14.5 A, VGS = 5 V 11 nC Drain–Source Diode Characteristics and Maximum Ratings VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.5 A (Note 2) VGS = 0 V, IS = 7 A (Note 2) 390 490 700 mV trr Diode Reverse Recovery Time 31 nS IRM Diode Reverse Recovery Current 1.8 A Qrr Diode Reverse Recovery Charge IF = 14.5A, diF/dt = 300 A/µs (Note 3) 30 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°/W when mounted on a 1 in 2 pad of 2 oz copper b) 105°/W when mounted on a .04 in 2 pad of 2 oz copper c) 125°/W when mounted on a minimum pad. See “SyncFET Schottky body diode characteristics” below Scale 1 : 1 on letter size paper Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
Аналогичный номер детали - FDS6676S |
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Аналогичное описание - FDS6676S |
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