CY7C1663KV18 datasheet(23/31 Pages) CYPRESS

номер детали	CY7C1663KV18

подробное описание детали	144-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)

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производитель	CYPRESS [Cypress Semiconductor]

домашняя страница	http://www.cypress.com

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23 / 31 page

Document Number: 001-44060 Rev. *O

Page 23 of 31

CY7C1663KV18/CY7C1665KV18

AC Electrical Characteristics

Over the Operating Range

Parameter [29]

Description

Test Conditions

Min

Typ

Max

Unit

VIH

Input high voltage

VREF + 0.2

–

VDDQ + 0.24

V

VIL

Input low voltage

-0.24

–

VREF – 0.2

V

Capacitance

Parameter [30]

Description

Test Conditions

Max

Unit

CIN

Input capacitance

TA = 25 °C, f = 1 MHz, VDD = 1.8 V, VDDQ = 1.5 V

4

pF

CO

Output capacitance

4pF

Thermal Resistance

Parameter [30]

Description

Test Conditions

165-ballFBGA

Package

Unit

JA (0 m/s)

Thermal resistance

(Junction to Ambient)

Socketed on a 170 × 220 × 2.35 mm, eight-layer printed

circuit board

12.23

°C/W

JA (1 m/s)

11.17

°C/W

JA (3 m/s)

10.42

°C/W

JB

Thermal resistance

(Junction to Board)

9.34

°C/W

JC

Thermal resistance

(Junction to Case)

2.10

°C/W

AC Test Loads and Waveforms

Figure 5. AC Test Loads and Waveforms

1.25 V

0.25 V

R = 50



5pF

INCLUDING

JIG AND

SCOPE

ALL INPUT PULSES

Device

RL = 50 

Z0 = 50 

VREF = 0.75 V

[31]

0.75 V

Under

Test

0.75 V

Device

Under

Test

OUTPUT

0.75 V

VREF

OUTPUT

ZQ

(a)

Slew Rate = 2 V/ns

RQ =

250



(b)

RQ =

250



Notes

29. Overshoot: VIH(AC) < VDDQ + 0.35 V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > 0.3 V (Pulse width less than tCYC/2).

30. Tested initially and after any design or process change that may affect these parameters.

31. Unless otherwise noted, test conditions are based on signal transition time of 2 V/ns, timing reference levels of 0.75 V, Vref = 0.75 V, RQ = 250

, VDDQ = 1.5 V, input

pulse levels of 0.25 V to 1.25 V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of Figure 5.

Аналогичный номер детали - CY7C1663KV18

производитель	номер детали	датащи	подробное описание детали
Cypress Semiconductor	CY7C166	171Kb / 9P	16K x 4 Static RAM
	CY7C166	266Kb / 9P	16K x 4 Static RAM
	CY7C166-15PC	171Kb / 9P	16K x 4 Static RAM
	CY7C166-15VC	171Kb / 9P	16K x 4 Static RAM
	CY7C166-15VC	266Kb / 9P	16K x 4 Static RAM

More results

Аналогичное описание - CY7C1663KV18

производитель	номер детали	датащи	подробное описание детали
Cypress Semiconductor	CY7C1643KV18	861Kb / 31P	144-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)
	CY7C2663KV18	871Kb / 31P	144-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
	CY7C15632KV18	783Kb / 30P	72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
	CY7C1161KV18	881Kb / 29P	18-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
	CY7C1263KV18	887Kb / 30P	36-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
	CY7C15632KV18	760Kb / 30P	72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
	CY7C1563XV18	1Mb / 29P	72-Mbit QDR짰 II Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
	CY7C1263XV18	1Mb / 30P	36-Mbit QDR짰 II Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
	CY7C1563XV18	1Mb / 29P	72-Mbit QDR짰 II Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
	CY7C1143KV18	619Kb / 29P	18-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)

More results

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Аналогичный номер детали - CY7C1663KV18

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