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TPC6201 датащи(PDF) 1 Page - Toshiba Semiconductor

номер детали TPC6201
подробное описание детали  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
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TPC6201 датащи(HTML) 1 Page - Toshiba Semiconductor

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TPC6201
2002-01-17
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
TPC6201
HDD Motor Drive Applications
Notebook PC Applications
Portable Equipment Applications
· Low drain-source ON resistance: RDS (ON) = 80 mΩ (typ.)
· High forward transfer admittance: |Yfs| = 3.8 S (typ.)
· Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
· Enhancement-model: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kW)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
2.5
Drain
current
Pulse
(Note 1)
IDP
10
A
Single-device operation
(Note 3a)
PD (1)
0.9
Drain power
dissipation
(t
= 5 s)
(Note 2a)
Single device value at
dual operation (Note 3b)
PD (2)
0.76
W
Single-device operation
(Note 3a)
PD (1)
0.4
Drain power
dissipation
(t
= 5 s)
(Note 2b)
Single device value at
dual operation (Note 3b)
PD (2)
0.31
W
Single pulse avalanche energy (Note 4)
EAS
1.0
mJ
Avalanche current
IAR
1.25
A
Repetitive avalanche energy
(Note 5)
EAR
0.16
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55 to 150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Single-device operation
(Note 3a)
Rth (ch-a) (2)
139
Thermal Resistance
(channel-to-ambient)
(t
= 5 s)
(Note 2a) Single device value at
dual operation (Note 3b)
Rth (ch-a) (2)
165
°C/W
Single-device operation
(Note 3a)
Rth (ch-a) (2)
310
Thermal Resistance
(channel-to-ambient)
(t
= 5 s)
(Note 2b) Single device value at
dual operation (Note 3b)
Rth (ch-a) (2)
400
°C/W
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) Please see next page.
This transistor is an electrostatically sensitive device. Please handle it with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3T1B
Weight: 0.011 g (typ.)
Circuit Configuration
6
4
1
2
3
5
Marking (Note 6)
S 4 A


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