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FDS8958 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS8958 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page October 2004 ©2004 Fairchild Semiconductor Corporation FDS8958 Rev A(W) FDS8958 Dual N & P-Channel PowerTrench ® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • Q1: N-Channel 7.0A, 30V R DS(on) = 0.028Ω @ VGS = 10V R DS(on) = 0.040Ω @ VGS = 4.5V • Q2: P-Channel -5A, -30V R DS(on) = 0.052Ω @ VGS = -10V R DS(on) = 0.080Ω @ VGS = -4.5V • Fast switching speed • High power and handling capability in a widely used surface mount package S D S S SO-8 D D D G D1 D1 D2 D2 S1 G1 S2 G2 Pin 1 SO-8 4 3 2 1 5 6 7 8 Q1 Q2 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter Q1 Q2 Units VDSS Drain-Source Voltage 30 30 V VGSS Gate-Source Voltage ±20 ±20 V ID Drain Current - Continuous (Note 1a) 7 -5 A - Pulsed 20 -20 PD Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS8958 FDS8958 13” 12mm 2500 units |
Аналогичный номер детали - FDS8958 |
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Аналогичное описание - FDS8958 |
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