BC817DPN datasheet(7/12 Pages) PHILIPS

номер детали	BC817DPN

подробное описание детали	NPN/PNP general purpose transistor

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производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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7 / 12 page

2002 Nov 22

7

Philips Semiconductors

Product speciﬁcation

NPN/PNP general purpose transistor

BC817DPN

handbook, halfpage

−103

−102

−10

−1

MHC326

−10−1

−1

−10

VCEsat

(mV)

−102

IC (mA)

−103

(1)

(2)

(3)

Fig.8

Collector-emitter saturation voltage as a

function of collector current; typical values.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

TR2 (PNP) IC/IB = 10.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MHC327

−10−1

−1

−10

VBE

(mV)

−102

IC (mA)

−103

(3)

(2)

(1)

Fig.9

Base-emitter voltage as a function of

collector current; typical values.

(1) Tamb = −55 °C.

(2) Tamb =25 °C.

(3) Tamb = 150 °C.

TR2 (PNP) VCE = −1V.

Аналогичный номер детали - BC817DPN

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Аналогичное описание - BC817DPN

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