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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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KM29U64000IT датащи(PDF) 2 Page - Samsung semiconductor |
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KM29U64000IT датащи(HTML) 2 Page - Samsung semiconductor |
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2 / 26 page  KM29U64000T, KM29U64000IT FLASH MEMORY 2 8M x 8 Bit NAND Flash Memory The KM29U64000 is a 8M(8,388,608)x8bit NAND Flash Mem- ory with a spare 256K(262,144)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 200 µs and an erase operation can be performed in typ- ically 2ms on an 8K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and inter- nal verify and margining of data. Even the write-intensive sys- tems can take advantage of the KM29U64000 ′s extended reliability of 1,000,000 program/erase cycles by providing either ECC(Error Correcting Code) or real time mapping-out algo- rithm. These algorithms have been implemented in many mass storage applications and also the spare 16 bytes of a page combined with the other 512 bytes can be utilized by system- level ECC. The KM29U64000 is an optimum solution for large nonvolatile storage applications such as solid state file storage, digital voice recorder, digital still camera and other portable applica- tions requiring non-volatility. GENERAL DESCRIPTION FEATURES • Voltage Supply : 2.7V ~ 3.6V • Organization - Memory Cell Array : (8M + 256K)bit x 8bit - Data Register : (512 + 16)bit x8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte • 528-Byte Page Read Operation - Random Access : 7 µs(Max.) - Serial Page Access : 50ns(Min.) • Fast Write Cycle Time - Program time : 200 µs(typ.) - Block Erase time : 2ms(typ.) • Command/Address/Data Multiplexed I/O port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology - Endurance : 1M Program/Erase Cycles - Data Retention : 10 years • Command Register Operation • 44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch) PIN CONFIGURATION VSS CLE ALE WE WP N.C N.C N.C N.C N.C N.C N.C N.C N.C N.C I/O0 I/O1 I/O2 I/O3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 VCCQ I/O4 I/O5 I/O6 I/O7 N.C N.C N.C N.C N.C N.C N.C N.C N.C N.C SE R/B RE CE VCC 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 44(40) TSOP (II) STANDARD TYPE NOTE : Connect all VCC, VCCQ and VSS pins of each device to power supply outputs. Do not leave VCC or VSS disconnected. Pin Name Pin Function I/O0 ~ I/O7 Data Input/Outputs CLE Command Latch Enable ALE Address Latch Enable CE Chip Enable RE Read Enable WE Write Enable WP Write Protect SE Spare area Enable R/B Ready/Busy output VCC Power(2.7V ~ 3.6V) VCCQ Output Buffer Power(2.7V~3.6V or 5.0V) VSS Ground N.C No Connection PIN DESCRIPTION |
Аналогичный номер детали - KM29U64000IT |
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Аналогичное описание - KM29U64000IT |
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