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FDS8947A датащи(PDF) 2 Page - Fairchild Semiconductor

номер детали FDS8947A
подробное описание детали  Dual P-Channel Enhancement Mode Field Effect Transistor
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS8947A датащи(HTML) 2 Page - Fairchild Semiconductor

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Electrical Characteristics
(T
A = 25
OC unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS = 0 V, I D = -250 µA
-30
V
BV
DSS/TJ
Breakdown Voltage Temp. Coefficient
I
D = -250 µA, Referenced to 25
oC
-23
mV /
oC
I
DSS
Zero Gate Voltage Drain Current
V
DS = -24 V, VGS = 0 V
-1
µA
I
GSSF
Gate - Body Leakage, Forward
V
GS = 20 V, VDS = 0 V
-100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS = -20 V, VDS= 0 V
-100
nA
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS = VGS, ID = -250 µA
-1
-1.5
-3
V
V
GS(th)/TJ
Gate Threshold Voltage Temp. Coefficient
I
D = -250 µA, Referenced to 25
oC
4
mV /
oC
R
DS(ON)
Static Drain-Source On-Resistance
V
GS = -10 V, I D = -4 A
0.044
0.052
T
J =125°C
0.06
0.085
V
GS = -4.5 V, I D = -3.2 A
0.067
0.08
I
D(ON)
On-State Drain Current
V
GS = -10 V, VDS = -5 V
-20
A
g
FS
Forward Transconductance
V
DS = -10 V, I D = -4 A
8
S
DYNAMIC CH ARACTERISTICS
C
iss
Input Capacitance
V
DS = -15 V, VGS = 0 V,
f = 1.0 MHz
730
pF
C
oss
Output Capacitance
400
pF
C
rss
Reverse Transfer Capacitance
90
pF
SWITCHING CHARACTERISTICS (Note 2)
t
D(on)
Turn - On Delay Time
V
DS = -10 V, I D = -1 A
11
20
ns
t
r
Turn - On Rise Time
V
GS = -10 V , RGEN = 6
10
18
t
D(off)
Turn - Off Delay Time
90
110
t
f
Turn - Off Fall Time
55
80
Q
g
Total Gate Charge
V
DS = -10 V, I D = -4 A,
19
27
nC
Q
gs
Gate-Source Charge
V
GS = -10 V
3.5
Q
gd
Gate-Drain Charge
3.6
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
-1.3
A
V
SD
Drain-Source Diode Forward Voltage
V
GS = 0 V, I S = -1.3 A (Note 2)
-0.75
-1.2
V
t
rr
Reverse Recovery Time
V
GS = 0 V, IF = -1.3 A
dI
F/dt = 100 A/µs
48
100
ns
Irr
Reverse Recovery Current
0.8
A
Notes:
1. R
θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while R
θCA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDS8947A Rev.B
c. 135OC/W on a 0.003 in2
pad of 2oz copper.
b. 125
OC/W on a 0.02 in2
pad of 2oz copper.
a. 78
OC/W on a 0.5 in2
pad of 2oz copper.


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