S29GL01GP datasheet(37/82 Pages) CYPRESS

номер детали	S29GL01GP

подробное описание детали	1 Gbit, 512, 256, 128 Mbit, 3 V, Page Flash with 90 nm MirrorBit Process Technology

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производитель	CYPRESS [Cypress Semiconductor]

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37 / 82 page

Document Number: 002-00886 Rev. *B

Page 37 of 83

S29GL01GP

S29GL512P

S29GL256P

S29GL128P

8.

Advanced Sector Protection/Unprotection

The Advanced Sector Protection/Unprotection feature disables or enables programming or erase operations in any or all sectors and

can be implemented through software and/or hardware methods, which are independent of each other. This section describes the

various methods of protecting data stored in the memory array. An overview of these methods in shown in Figure 8.1.

Figure 8.1

Advanced Sector Protection/Unprotection

Hardware Methods

Software Methods

WP#/ACC = VIL

(Highest or Lowest

Sector Locked)

Password Method

(DQ2)

Persistent Method

(DQ1)

Lock Register

(One Time Programmable)

PPB Lock Bit

1,2,3

64-bit Password

(One Time Protect)

1 = PPBs Unlocked

0 = PPBs Locked

Memory Array

Sector 0

Sector 1

Sector 2

Sector N-2

Sector N-1

Sector N

3

PPB 0

PPB 1

PPB 2

PPB N-2

PPB N-1

PPB N

Persistent

Protection Bit

(PPB)

4,5

DYB 0

DYB 1

DYB 2

DYB N-2

DYB N-1

DYB N

Dynamic

Protection Bit

(DYB)

6,7,8

7. 0 = Sector Protected,

1 = Sector Unprotected.

8. Protect effective only if PPB Lock Bit is

unlocked and corresponding PPB is “1”

(unprotected).

9. Volatile Bits: defaults to user choice upon

power-up (see ordering options).

5. 0 = Sector Protected,

1 = Sector Unprotected.

6. PPBs programmed individually,

but cleared collectively

1. Bit is volatile, and defaults to “1” on reset.

2. Programming to “0” locks all PPBs to their

current state.

3. Once programmed to “0”, requires hardware

reset to unlock.

4. N = Highest Address Sector.

Аналогичный номер детали - S29GL01GP

производитель	номер детали	датащи	подробное описание детали
SPANSION	S29GL01GP	2Mb / 77P	3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
	S29GL01GP	2Mb / 81P	1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
	S29GL01GP	2Mb / 81P	1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
	S29GL01GP	2Mb / 81P	1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
	S29GL01GP	2Mb / 81P	1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology

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Аналогичное описание - S29GL01GP

производитель	номер детали	датащи	подробное описание детали
Cypress Semiconductor	S29GL512N	1Mb / 92P	512, 256, 128 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit
SPANSION	S29GL01GP11TFIR20	2Mb / 81P	1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
	S29GL128P90FFIR20	2Mb / 81P	1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
	S29GL01GP13FFIV20	2Mb / 81P	1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
	S29GL-P	2Mb / 81P	1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
	S29GL512P12TFIV20	2Mb / 81P	1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
	S29GL-P	2Mb / 77P	3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
	S29GL-P	1Mb / 71P	3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
STMicroelectronics	NAND128-A	916Kb / 57P	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
Cypress Semiconductor	S29GL01GS	1Mb / 108P	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory

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