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SI1407DL датащи(PDF) 2 Page - Vishay Siliconix |
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SI1407DL датащи(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Si1407DL Vishay Siliconix New Product www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 71074 S-01561—Rev. C, 17-Jul-00 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250 mA –0.45 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = –9.6 V, VGS = 0 V –1 mA Zero Gate Voltage Drain Current IDSS VDS = –9.6 V, VGS = 0 V, TJ = 85_C –5 mA On-State Drain Currenta ID(on) VDS = –5 V, VGS = –4.5 V –2 A DiS OS R i a VGS = –4.5 V, ID = –1.8 A 0.105 0.130 W Drain-Source On-State Resistancea rDS(on) VGS = –2.5 V, ID = –1.5 A 0.140 0.170 W VGS = –1.8 V, ID = –0.8 A 0.185 0.225 Forward Transconductancea gfs VDS = –10 V, ID = –1.8 A 4.3 S Diode Forward Voltagea VSD IS = –0.8 A, VGS = 0 V –0.77 –1.1 V Dynamicb Total Gate Charge Qg V 6 V V 45 V I 18 A 5.5 7.0 C Gate-Source Charge Qgs VDS = –6 V, VGS = –4.5 V, ID = –1.8 A 0.95 nC Gate-Drain Charge Qgd 1.10 Turn-On Delay Time td(on) V6 V R 10 W 8 12 Rise Time tr VDD = –6 V, RL = 10 W I1 A V 4 5 V R 6 W 33 50 Turn-Off Delay Time td(off) DD , L ID ^ –1 A, VGEN = –4.5 V, RG = 6 W 32 50 ns Fall Time tf 29 45 Source-Drain Reverse Recovery Time trr IF = –0.8 A, di/dt = 100 A/ms 20 40 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 0.8 1.6 2.4 3.2 4.0 0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 012345 VGS = 5 thru 2 V TC = 125_C –55 _C 25 _C Output Characteristics Transfer Characteristics VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) 1 V 1.5 V |
Аналогичный номер детали - SI1407DL |
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Аналогичное описание - SI1407DL |
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