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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LTM4636 датащи(PDF) 18 Page - Linear Technology |
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LTM4636 датащи(HTML) 18 Page - Linear Technology |
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18 / 36 page  LTM4636 18 4636f For more information www.linear.com/LTM4636 where VD appears to increase with temperature. It is com- mon knowledge that a silicon diode biased with a current source has an approximate –2mV/°C temperature rela- tionship (Figure 7), which is at odds with the equation. In fact, the IS term increases with temperature, reducing the ln(ID/IS) absolute value yielding an approximate –2mV/°C composite diode voltage slope. applicaTions inForMaTion To obtain a linear voltage proportional to temperature we cancel the IS variable in the natural logarithm term to remove the IS dependency from the equation 1. This is accomplished by measuring the diode voltage at two cur- rents I1, and I2, where I1=10•I2) and subtracting we get: ∆VD = T(KELVIN)•KD•IN I1 IS – T(KELVIN)•KD•IN I2 IS Combining like terms, then simplifying the natural log terms yields: ∆VD = T(KELVIN)•KD•lN(10) and redefining constant K'D=KD•IN(10) = 198µV K yields ∆VD = K'D•T(KELVIN) Figure 7. Diode Voltage VD vs Temperature T(°C) TEMPERATURE (°C) –50 –25 0.3 0.5 0.8 0 50 75 0.4 0.7 0.6 25 100 4636 F07 125 Solving for temperature: T(KELVIN) = ∆VD K'D ( °CELSIUS)= T(KELVIN)–273.15 where 300°K = 27°C means that is we take the difference in voltage across the diode measured at two currents with a ratio of 10, the resulting voltage is 198μV per Kelvin of the junction with a zero intercept at 0 Kelvin. ThediodeconnectedNPNtransistorattheTEMPpincanbe used to monitor the internal temperature of the LTM4636. Figure 8. The Two Images Show the LTM4636 Operating at 1V at 40A and 3.3V at 35A from a 12V Input. Both Images Reflect Only a 40°C to 45°C Rise Above Ambient at Full Load Current with 200LFM. 8b. 8a. VIN VOUT IOUT AIR FLOW 12 1 40 200 LFM VIN VOUT IOUT AIR FLOW 12 3.3 35 200 LFM |
Аналогичный номер детали - LTM4636 |
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Аналогичное описание - LTM4636 |
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