SI4403BDY-T1 datasheet(1/5 Pages) VISHAY

номер детали	SI4403BDY-T1

подробное описание детали	P-Channel 1.8-V (G-S) MOSFET

Download	5 Pages

Scroll/Zoom	100%

производитель	VISHAY [Vishay Siliconix]

домашняя страница	http://www.vishay.com

Logo

1 / 5 page

FEATURES

D TrenchFETr Power MOSFETS

Si4403BDY

Vishay Siliconix

New Product

Document Number: 72268

S-31412—Rev. A, 07-Jul-03

www.vishay.com

1

P-Channel 1.8-V (G-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

0.017 @ VGS = - 4.5 V

- 9.9

-20

0.023 @ VGS = - 2.5 V

- 8.5

0.032 @ VGS = - 1.8 V

- 7.2

SD

S

D

SD

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

S

G

D

P-Channel MOSFET

Ordering Information: Si4403BDY

Si4403BDY-T1 (with Tape and Reel)

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

VDS

-20

V

Gate-Source Voltage

VGS

"8

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

- 9.9

- 7.3

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

- 7.9

- 5.8

A

Pulsed Drain Current

IDM

-30

A

continuous Source Current (Diode Conduction)a

IS

- 2.3

- 1.3

Maximum Power Dissipationa

TA = 25_C

PD

2.5

1.35

W

Maximum Power Dissipationa

TA = 70_C

PD

1.6

0.87

W

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t A bi

ta

t

v 10 sec

R

43

50

Maximum Junction-to-Ambienta

Steady State

RthJA

71

92

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

19

25

C/W

Notes

a

Surface Mounted on 1” x 1” FR4 Board.

Аналогичный номер детали - SI4403BDY-T1

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	Si4403BDY-T1-E3	231Kb / 9P	P-Channel 1.8-V (G-S) MOSFET Rev. C, 27-Apr-09
VBsemi Electronics Co.,...	SI4403BDY-T1-E3	1Mb / 9P	P-Channel 20-V (D-S) MOSFET
Vishay Siliconix	Si4403BDY-T1-GE3	231Kb / 9P	P-Channel 1.8-V (G-S) MOSFET Rev. C, 27-Apr-09

More results

Аналогичное описание - SI4403BDY-T1

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI1305DL	42Kb / 4P	P-Channel 1.8-V (G-S) MOSFET Rev. C, 07-Apr-03
	SI2311DS-T1-E3	214Kb / 8P	P-Channel 1.8-V (G-S) MOSFET Rev. B, 24-Mar-08
	SI1407DL-T1	80Kb / 5P	P-Channel 1.8-V (G-S) MOSFET Rev. D, 12-Jun-06
	SI4465ADY	216Kb / 4P	P-Channel 1.8-V (G-S) MOSFET Rev. A, 01-Jan-07
	SI6467BDQ	196Kb / 4P	P-Channel 1.8-V (G-S) MOSFET Rev. B, 12-Dec-05
	SI1307DL	68Kb / 4P	P-Channel 1.8-V (G-S) MOSFET Rev. A, 01-Nov-99
	SI1407DL	64Kb / 4P	P-Channel 1.8-V (G-S) MOSFET Rev. C, 17-Jul-00
	SI1305DL	109Kb / 5P	P-Channel 1.8-V (G-S) MOSFET S-51075-Rev. D, 13-Jun-05
Leshan Radio Company	LSI1013XT1G	371Kb / 6P	P-Channel 1.8-V (G-S) MOSFET
Vishay Siliconix	SI6467BDQ-T1-E3	208Kb / 11P	P-Channel 1.8-V (G-S) MOSFET Rev. D, 31-Mar-08
Vishay Siliconix	SI2315BDS	181Kb / 8P	P-Channel 1.8-V (G-S) MOSFET 01-Jan-2022

More results

SI4403BDY-T1 датащи(PDF) 1 Page - Vishay Siliconix

SI4403BDY-T1 датащи(HTML) 1 Page - Vishay Siliconix

Аналогичный номер детали - SI4403BDY-T1

Аналогичное описание - SI4403BDY-T1

Html Pages

1 2 3 4 5

датащи скачать

ссылки URL