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FDS4685 датащи(PDF) 4 Page - Fairchild Semiconductor |
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FDS4685 датащи(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page 4 www.fairchildsemi.com FDS4685 Rev. C(W) Typical Characteristics: 0 2 4 6 8 10 05 10 15 20 25 30 35 40 Qg, GATE CHARGE (nC) ID = -8.2A VDS = -10V -20V -30V 0 500 1000 1500 2000 2500 05 10 15 20 25 30 35 40 -V DS, DRAIN TO SOURCE VOLTAGE (V) C ISS C OSS C RSS f = 1 MHz V GS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -V DS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms 100 µs R DS(ON) LIMIT V GS = -10V SINGLE PULSE RθJA = 125°C/W T A = 25° C 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1, TIME (sec) SINGLE PULSE RθJA = 125°C/W T A = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA(t) = r(t) * Rθ JA RθJA = 125 °C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. D = 0.5 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 |
Аналогичный номер детали - FDS4685 |
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Аналогичное описание - FDS4685 |
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