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FDS4685 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS4685 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com June 2005 FDS4685 Rev. C(W) FDS4685 40V P-Channel PowerTrench® MOSFET Features ■ –8.2 A, –40 V RDS(ON) = 0.027 Ω @ VGS = –10 V RDS(ON) = 0.035 Ω @ VGS = –4.5 V ■ Fast switching speed ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability Applications ■ Power management ■ Load switch ■ Battery protection General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). Absolute Maximum Ratings TA = 25°C unless otherwise noted Package Marking and Ordering Information Symbol Parameter Ratings Units VDSS Drain-Source Voltage –40 V VGSS Gate-Source Voltage ±20 V ID Drain Current - Continuous (Note 1a) –8.2 A - Pulsed –50 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.4 (Note 1c) 1.2 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 Device Marking Device Reel Size Tape width Quantity FDS4685 FDS4685 13” 12mm 2500 units S Pin 1 D S S SO-8 D D D G 5 6 7 8 4 3 2 1 |
Аналогичный номер детали - FDS4685 |
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Аналогичное описание - FDS4685 |
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