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FDS4685 датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS4685 датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page 2 www.fairchildsemi.com FDS4685 Rev. C(W) Electrical Characteristics TA = 25°C unless otherwise noted Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –40 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C –32 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = –32 V, VGS = 0 V –1 µA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA–1 –1.6 –3 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C 4.7 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = –10 V, ID = –8.2 A VGS = –4.5 V, ID = –7 A VGS = –10 V, ID = –8.2 A, TJ = 125°C 22 29 31 27 35 42 m Ω gFS Forward Transconductance VDS = –5 V, ID = –8.2 A 22 S Dynamic Characteristics Ciss Input Capacitance VDS = –20 V, VGS = 0 V, f = 1.0 MHz 1872 pF Coss Output Capacitance 256 pF Crss Reverse Transfer Capacitance 134 pF RG Gate Resistance VGS = 15 mV, f = 1MHz 4 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time VDD = –20 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω 14 25 ns tr Turn–On Rise Time 11 20 ns td(off) Turn–Off Delay Time 50 80 ns tf Turn–Off Fall Time 18 32 ns Qg Total Gate Charge VDS = –20 V, ID = –8.2 A, VGS = –5 V 19 27 nC Qgs Gate–Source Charge 5.6 nC Qgd Gate–Drain Charge 6.1 nC Drain–Source Diode Characteristics VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –2.1 A (Note 2) –0.7 –1.2 V trr Diode Reverse Recovery Time IF = –8.2 A, diF/dt = 100 A/µs 26 nS Qrr Diode Reverse Recovery Charge 15 nC a) 50°C/W when mounted on a 1 in2 pad of 2 oz copper b) 105°/W when mounted on a .04 in2 pad of 2 oz copper c) 125°/W when mounted on a minimum pad. |
Аналогичный номер детали - FDS4685 |
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Аналогичное описание - FDS4685 |
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