поискавой системы для электроныых деталей |
|
FDS6699S датащи(PDF) 3 Page - Fairchild Semiconductor |
|
FDS6699S датащи(HTML) 3 Page - Fairchild Semiconductor |
3 / 6 page 3 www.fairchildsemi.com FDS6699S Rev. D Typical Characteristics Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 17.5 35 52.5 70 87.5 105 0 0.5 1 1.5 2 V DS, DRAIN-SOURCE VOLTAGE (V) 2.5V 3.5V V GS = 10V 4.5V 3.0V 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 0 17.5 35 52.5 70 87.5 105 I D, DRAIN CURRENT (A) V GS = 2.5V 4.5V 3.0V 3.5V 10V 6.0V 4.0V 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 T J, JUNCTION TEMPERATURE (°C) I D = 21A V GS =10V 0.002 0.004 0.006 0.008 0.01 0.012 2468 10 V GS, GATE TO SOURCE VOLTAGE (V) I D = 10.5A T A = 125°C T A = 25°C 0 17.5 35 52.5 70 87.5 105 1 1.5 2 2.5 3 V GS, GATE TO SOURCE VOLTAGE (V) T A = 125°C 25 °C -55 °C V DS = 5V 0.001 0.01 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 V SD , BODY DIODE FORWARD VOLTAGE (V) T A = 125°C 25 °C -55 °C V GS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
Аналогичный номер детали - FDS6699S |
|
Аналогичное описание - FDS6699S |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |