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FDS8880 датащи(PDF) 3 Page - Fairchild Semiconductor

номер детали FDS8880
подробное описание детали  N-Channel PowerTrench MOSFET
Download  12 Pages
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS8880 датащи(HTML) 3 Page - Fairchild Semiconductor

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FDS8880 Rev. A1
www.fairchildsemi.com
3
Switching Characteristics (V
GS = 10V)
Drain-Source Diode Characteristics
Notes:
1: Starting TJ = 25°C, L = 1mH, IAS = 12.8A, VDD = 30V, VGS = 10V.
2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design.
3: RθJA is measured with 1.0 in
2 copper on FR-4 board
4: FDS8880_NL is lead free product. FDS8880_NL marking will appear on the reel label.
tON
Turn-On Time
VDD = 15V, ID = 11.6A
VGS = 10V, RGS = 11Ω
--
51
ns
td(ON)
Turn-On Delay Time
-
7
-
ns
tr
Rise Time
-
27
-
ns
td(OFF)
Turn-Off Delay Time
-
38
-
ns
tf
Fall Time
-
15
-
ns
tOFF
Turn-Off Time
-
-
80
ns
VSD
Source to Drain Diode Voltage
ISD = 11.6A
-
-
1.25
V
ISD = 2.1A
-
-
1.0
V
trr
Reverse Recovery Time
ISD = 11.6A, dISD/dt=100A/µs-
-
30
ns
QRR
Reverse Recovered Charge
ISD = 11.6A, dISD/dt=100A/µs-
-
20
nC


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