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FDS9934C датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS9934C датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page March 2006 ©2006 Fairchild Semiconductor Corporation FDS9934C Rev D(W) FDS9934C Complementary These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • Q1: 6.5 A, 20 V. R DS(ON) = 30 m Ω @ V GS = 4.5 V RDS(ON) = 43 m Ω @ V GS = 2.5 V. • Q2: –5 A, –20 V, R DS(ON) = 55 m Ω @ V GS = –4.5 V RDS(ON) = 90 m Ω @ V GS = –2.5 V S D S S SO-8 D D D G D1 D1 D2 D2 S1 G1 S2 G2 Pin 1 SO-8 4 3 2 1 5 6 7 8 Q1 Q2 Absolute Maximum Ratings TA=25 oC unless otherwise noted Ratings Units Symbol Parameter Q1 Q2 VDSS Drain-Source Voltage 20 –20 V VGSS Gate-Source Voltage ±10 ±12 V ID Drain Current – Continuous (Note 1a) 6.5 –5 A – Pulsed 20 –30 Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 PD (Note 1c) 0.9 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS9934C FDS9934C 13’’ 12mm 2500 units |
Аналогичный номер детали - FDS9934C |
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Аналогичное описание - FDS9934C |
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