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PMEG3020EJ датащи(PDF) 3 Page - NXP Semiconductors

номер детали PMEG3020EJ
подробное описание детали  30 V, 2 A ultra low VF MEGA Schottky barrier rectifiers
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PMEG3020EJ датащи(HTML) 3 Page - NXP Semiconductors

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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 31 May 2005
3 of 9
Philips Semiconductors
PMEG3020EH; PMEG3020EJ
30 V, 2 A ultra low VF MEGA Schottky barrier rectifiers
5.
Limiting values
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and IF(AV) rating will be available on request.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
-
30
V
IF
forward current
Tsp ≤ 55 °C-
2
A
IFRM
repetitive peak forward
current
tp ≤ 1 ms; δ≤ 0.25
-
4.5
A
IFSM
non-repetitive peak forward
current
t = 8 ms; square
wave
[1] -9
A
Ptot
total power dissipation
Tamb ≤ 25 °C
PMEG3020EH
[1] -
375
mW
[2] -
830
mW
PMEG3020EJ
[1] -
360
mW
[2] -
830
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
Table 7:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
in free air
PMEG3020EH
[1] [2] -
-
330
K/W
[2] [3] -
-
150
K/W
PMEG3020EJ
[1] [2] -
-
350
K/W
[2] [3] -
-
150
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
PMEG3020EH
-
-
60
K/W
PMEG3020EJ
-
-
55
K/W


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