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STB20NK50Z датащи(PDF) 3 Page - STMicroelectronics |
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STB20NK50Z датащи(HTML) 3 Page - STMicroelectronics |
3 / 13 page 3/13 STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF DYNAMIC SWITCHING ON/OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =1mA,VGS = 0 500 V IDSS Zero Gate Voltage Drain Current (VGS =0) VDS =Max Rating VDS =Max Rating,TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS =0) VGS = ± 20 V ±10 µA VGS(th) Gate Threshold Voltage VDS =VGS,ID = 100 µA 3 3.75 4.5 V RDS(on) Static Drain-source On Resistance VGS =10V, ID = 8.5 A 0.23 0.27 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS =15V, ID =8.5 A 13 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V,f= 1MHz,VGS = 0 2600 328 72 pF pF pF Coss eq. (3) Equivalent Output Capacitance VGS =0V, VDS = 0V to 640V 187 pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD =250 V, ID =8.5 A RG =4.7Ω , VGS =10V (Resistive Load see, Figure 3) 28 20 70 15 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =400 V, ID =17 A, VGS =10 V 85 15.5 42 119 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 17 68 A A VSD (1) ForwardOnVoltage ISD =17A,VGS =0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =17A,di/dt =100 A/µs VR = 100 V, Tj =25°C (see test circuit, Figure 5) 355 3.90 22 ns µC A trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =17A,di/dt =100 A/µs VR = 100 V, Tj =150°C (see test circuit, Figure 5) 440 5.72 26 ns µC A |
Аналогичный номер детали - STB20NK50Z |
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Аналогичное описание - STB20NK50Z |
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