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STB12NK80ZT4 датащи(PDF) 4 Page - STMicroelectronics |
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STB12NK80ZT4 датащи(HTML) 4 Page - STMicroelectronics |
4 / 15 page 2 Electrical characteristics STB12NK80Z - STP12NK80Z - STW12NK80Z 4/15 Table 7. Source drain diode Table 8. Gate-source zener diode (1) ISD ≤10.5 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Pulse width limited by safe operating area (3) Limited only by maximum temperature allowed (4) Pulsed: pulse duration = 300µs, duty cycle 1.5% (5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%VDSS (6)The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDMNote 2 Source-drain Current Source-drain Current (pulsed) 10.5 42 A A VSDNote 4 Forward on Voltage ISD=10.5 A, VGS=0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=10.5A, di/dt = 100A/µs, VDD=100 V, Tj=150°C 635 5.9 18.5 ns µC A Symbol Parameter Test Conditions Min. Typ. Max. Unit BVGSO Note 6 Gate-Source Breakdown Voltage Igs=±1mA (Open Drain) 30 V |
Аналогичный номер детали - STB12NK80ZT4 |
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Аналогичное описание - STB12NK80ZT4 |
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