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FMBS5551 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FMBS5551 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page ©2004 Fairchild Semiconductor Corporation Rev. A1, November 2004 E C1 NC C C B SuperSOTTM-6 single Mark: .3S1 pin #1 Absolute Maximum Ratings* T a=25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T a=25°C unless otherwise noted * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Symbol Parameter Value Units VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 600 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Sustaining Voltage * IC = 1.0mA, IB = 0 160 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 180 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6.0 V ICBO Collector Cutoff Current VCB = 120V, IE = 0 VCB = 120V, IE = 0, Ta = 100°C 50 50 nA µA IEBO Emitter Cut-off Current VEB = 4.0V, IC = 0 50 nA On Characteristics hFE DC Current Gain IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V 80 80 30 250 VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA 0.15 0.2 V VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA 1.0 1.0 V Small Signal Characteristics fT Current Gain Bandwidth Product IC = 10mA, VCE = 10, f = 100MHz 100 300 MHz Cobo Output Capacitance VCE = 10V, IC = 0, f = 1.0MHz 6.0 pF Cibo Input Capacitance VBE = 0.5V, IC = 0, f = 1.0MHz 20 pF hfe Small Single Current Gain IC = 1.0mA, VCE = 10V, f = 1.0KHz 50 250 NF Noise Figure IC = 250µA, VCE = 5.0V, RS = 1.0KΩ, f = 10 Hz to 15.7KHz 8.0 dB NPN General Purpose Amplifier • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. FMBS5551 |
Аналогичный номер детали - FMBS5551 |
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Аналогичное описание - FMBS5551 |
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