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FDD306P датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDD306P датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page 2 www.fairchildsemi.com FDD306P Rev. C Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. 4. Starting TJ = 25°C, L = TBD, IAS = -6.7A Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –12 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C –0.6 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = –10 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage VGS = ±8V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.4 –0.5 –1.5 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C 2.2 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = –4.5 V, ID = –6.7 A VGS = –2.5 V, ID = –6.1 A VGS = –1.8 V, ID = –4.8 A VGS = –4.5 V, ID = –6.7A, TJ = 125°C 21 29 42 25 28 41 90 m Ω ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V –45 A gFS Forward Transconductance VDS = –5 V, ID = –6.7 A 22 S Dynamic Characteristics Ciss Input Capacitance VDS = –6 V, VGS = 0 V, f = 1.0 MHz 1290 pF Coss Output Capacitance 590 pF Crss Reverse Transfer Capacitance 430 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 4.2 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time VDD = –6 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω 16 29 ns tr Turn–On Rise Time 816 ns td(off) Turn–Off Delay Time 34 54 ns tf Turn–Off Fall Time 41 65 ns Qg Total Gate Charge VDS = –6V, ID = –6.7 A, VGS = –4.5 V 15 21 nC Qgs Gate–Source Charge 2.0 nC Qgd Gate–Drain Charge 4.4 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –3.2 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –3.2 A (Note 2) –0.8 –1.2 V Trr Diode Reverse Recovery Time IF = –6.7 A, diF/dt = 100 A/µs (Note 3) 37 ns Irm Diode Reverse Recovery Current 0.9 A Qrr Diode Reverse Recovery Charge 17 nC a) RθJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. P D R DS ON () ------------------------ |
Аналогичный номер детали - FDD306P |
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Аналогичное описание - FDD306P |
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