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FDS6676AS датащи(PDF) 3 Page - Fairchild Semiconductor |
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FDS6676AS датащи(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page 3 www.fairchildsemi.com FDS6676AS Rev. A (X) Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3. FDS6676AS_NL is a lead free product. The FDS6676AS_NL marking will appear on the reel label. Drain–Source Diode Characteristics and Maximum Ratings VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.5 A (Note 2) VGS = 0 V, IS = 7 A (Note 2) 0.4 0.5 0.7 V trr Diode Reverse Recovery Time IF = 14.5A, diF/dt = 300 A/µs (Note 3) 27 nS IRM Diode Reverse Recovery Current 1.9 A Qrr Diode Reverse Recovery Charge 26 nC a) 50°/W when mounted on a 1 in2 pad of 2 oz copper b) 105°/W when mounted on a .04 in2 pad of 2 oz copper c) 125°/W when mounted on a minimum pad. See “SyncFET Schottky body diode characteristics” below Electrical Characteristics TA = 25°C unless otherwise noted (Continued) Symbol Parameter Test Conditions Min Typ Max Units |
Аналогичный номер детали - FDS6676AS |
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Аналогичное описание - FDS6676AS |
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