поискавой системы для электроныых деталей |
|
FDS6676AS датащи(PDF) 5 Page - Fairchild Semiconductor |
|
FDS6676AS датащи(HTML) 5 Page - Fairchild Semiconductor |
5 / 8 page 5 www.fairchildsemi.com FDS6676AS Rev. A (X) Typical Characteristics FDS6676AS Rev A (X) 0 2 4 6 8 10 010 20 3040 50 Q g, GATE CHARGE (nC) I D = 14.5A V DS = 10V 20V 15V 0 500 1000 1500 2000 2500 3000 3500 05 10 15 20 25 30 V DS, DRAIN TO SOURCE VOLTAGE (V) C iss C rss C oss f = 1MHz V GS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms R DS(ON) LIMIT V GS = 10V SINGLE PULSE R JA = 125° C/W T A = 25° C 10ms 10s 100 µs 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1, TIME (sec) SINGLE PULSE R JA = 125°C/W T A = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , TIME (sec) R JC(t) = r(t) * R JC R JC = 125 °C/W TJ - TC = P * R JC(t) Duty Cycle, D = t 1 / t2 P(pk) t2 t1 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. |
Аналогичный номер детали - FDS6676AS |
|
Аналогичное описание - FDS6676AS |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |