поискавой системы для электроныых деталей |
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2SJ601-Z датащи(PDF) 3 Page - NEC |
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2SJ601-Z датащи(HTML) 3 Page - NEC |
3 / 4 page Preliminary Data Sheet D14646EJ1V0DS 3 2SJ601 PACKAGE DRAWINGS (Unit : mm) 1) TO-251 (MP-3) 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 13 6.5±0.2 5.0±0.2 4 2.3 2.3 0.5±0.1 2.3±0.2 1.1±0.2 0.5-0.1 +0.2 0.5-0.1 +0.2 2) TO-252 (MP-3Z) 1. Gate 2. Drain 3. Source 4. Fin (Drain) 12 3 4 6.5±0.2 5.0±0.2 2.3 2.3 0.9 MAX. 2.3±0.2 0.5±0.1 0.8 MAX. 0.8 1.1±0.2 EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. |
Аналогичный номер детали - 2SJ601-Z |
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Аналогичное описание - 2SJ601-Z |
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