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FDS7088SN3 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS7088SN3 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page 2004 Fairchild Semiconductor Corporation FDS7088SN3 Rev B (W) August 2004 FDS7088SN3 30V N-Channel PowerTrench SyncFET™ General Description The FDS7088SN3 is designed to replace a single SO-8 FLMP MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS7088SN3 includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS7088SN3 as the low-side switch in a synchronous rectifier is close to the performance of the FDS7088N3 in parallel with a Schottky diode. Applications • DC/DC converter • Motor drives Features • 21 A, 30 V RDS(ON) = 4.0 mΩ @ VGS = 10 V RDS(ON) = 4.9 mΩ @ VGS = 4.5 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size 4 5 3 6 2 7 1 8 Bottom-side Drain Contact Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) 21 A – Pulsed 60 PD Power Dissipation for Single Operation (Note 1a) 3.0 (Note 1b) 1.7 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 0.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS7088SN3 FDS7088SN3 13’’ 12mm 2500 units |
Аналогичный номер детали - FDS7088SN3 |
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Аналогичное описание - FDS7088SN3 |
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