SI4874DY datasheet(2/5 Pages) VISHAY

номер детали	SI4874DY

подробное описание детали	N-Channel 30-V MOSFET

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Si4874BDY

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 73058

S-41508—Rev. A, 09-Aug-04

MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

1.0

3.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V, TJ = 70_C

5

mA

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

30

A

Drain-Source On-State Resistancea

rDS(on)

VGS = 10 V, ID = 16 A

0.0057

0.007

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 14 A

0.0068

0.0085

W

Forward Transconductancea

gfs

VDS = 15 V, ID = 16 A

65

S

Diode Forward Voltagea

VSD

IS = 2.7 A, VGS = 0 V

0.74

1.1

V

Dynamicb

Total Gate Charge

Qg

21

25

Gate-Source Charge

Qgs

VDS = 15 V, VGS = 4.5 V, ID = 16 A

9.5

nC

Gate-Drain Charge

Qgd

6.5

Gate-Resistance

Rg

0.4

0.9

1.4

W

Turn-On Delay Time

td(on)

16

25

Rise Time

tr

VDD = 15 V, RL = 15 W

10

20

Turn-Off Delay Time

td(off)

VDD = 15 V, RL = 15 W

ID ^ 1 A, VGEN = 10 V, Rg = 6 W

57

90

ns

Fall Time

tf

15

25

Source-Drain Reverse Recovery Time

trr

IF = 2.7 A, di/dt = 100 A/ms

40

60

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

10

20

30

40

50

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

10

20

30

40

50

012345

VGS = 10 thru 4 V

25_C

TC = 125_C

−55_C

3 V

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

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