©2004 Fairchild Semiconductor Corporation

January 2004

FDD107AN06LA0 Rev. A1

FDD107AN06LA0

60V, 10A, 107m

Ω

Features

• Low Miller Charge

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 83524

Applications

• Motor / Body Load Control

• ABS Systems

• Powertrain Management

• Injection Systems

• DC-DC converters and Off-line UPS

• Distributed Power Architectures and VRMs

• Primary Switch for 12V and 24V systems

Thermal Characteristics

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

certificatio

n.

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

60

V

Gate to Source Voltage

±20

V

Drain Current

10.9

A

10

A

7.1

A

3.4

A

Pulsed

Figure 4

A

Single Pulse Avalanche Energy (Note 1)

9

mJ

Power dissipation

25

W

Derate above 25

W/

Operating and Storage Temperature

-55 to 175

Thermal Resistance Junction to Case TO-252

6.0

Thermal Resistance Junction to Ambient TO-252

100

Thermal Resistance Junction to Ambient TO-252, 1in

52

D

G

S

GATE

SOURCE

DRAIN (FLANGE)

TO-252AA

FDD SERIES