поискавой системы для электроныых деталей |
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2N4401RLRM датащи(PDF) 5 Page - ON Semiconductor |
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2N4401RLRM датащи(HTML) 5 Page - ON Semiconductor |
5 / 8 page 2N4401 http://onsemi.com 5 h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain these curves, a high−gain and a low−gain unit were selected from the 2N4401 lines, and the same units were used to develop the correspondingly numbered curves on each graph. Figure 11. Current Gain IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 100 200 20 70 50 300 Figure 12. Input Impedance IC, COLLECTOR CURRENT (mA) 50k 500 30 5.0 7.0 20k 10k 5.0k 2.0k 1.0k 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 5.0 7.0 Figure 13. Voltage Feedback Ratio IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 0.2 10 Figure 14. Output Admittance IC, COLLECTOR CURRENT (mA) 100 1.0 5.0 7.0 50 20 10 5.0 2.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 2N4401 UNIT 1 2N4401 UNIT 2 2N4401 UNIT 1 2N4401 UNIT 2 2N4401 UNIT 1 2N4401 UNIT 2 2N4401 UNIT 1 2N4401 UNIT 2 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 5.0 7.0 |
Аналогичный номер детали - 2N4401RLRM |
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Аналогичное описание - 2N4401RLRM |
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