поискавой системы для электроныых деталей |
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2PD601ARW датащи(PDF) 3 Page - NXP Semiconductors |
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2PD601ARW датащи(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 2002 Jun 26 3 Philips Semiconductors Preliminary specification NPN general purpose transistor 2PD601AW THERMAL CHARACTERISTICS Note 1. For mounting conditions, see “Thermal considerations and footprint design for SOT323 in the General Part of Data Handbook SC18”. CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 625 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector-base cut-off current IE = 0; VCB =60V − 10 nA IE = 0; VCB = 60 V; Tj = 150 °C − 5 µA IEBO emitter-base cut-off current IC = 0; VEB =5V − 10 nA hFE DC current gain IC = 100 mA; VCE = 2 V; note 1 90 − DC current gain IC = 2 mA; VCE =10V 2PD601AQW 160 260 2PD601ARW 210 340 2PD601ASW 290 460 VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 10 mA; note 1 − 500 mV Cc collector capacitance IE =ie = 0; VCB = 10 V; f = 1 MHz − 3.5 pF fT transition frequency IC = 2 mA; VCE =10V; f = 100 MHz 2PD601AQW 100 − MHz 2PD601ARW 120 − MHz 2PD601ASW 140 − MHz |
Аналогичный номер детали - 2PD601ARW |
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Аналогичное описание - 2PD601ARW |
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