поискавой системы для электроныых деталей |
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2PD601AS датащи(PDF) 2 Page - NXP Semiconductors |
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2PD601AS датащи(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 2002 Jun 26 2 Philips Semiconductors Preliminary specification NPN general purpose transistor 2PD601AW FEATURES • High collector current (max. 100 mA) • Low collector-emitter saturation voltage (max. 500 mV). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in an SC-70 (SOT323) plastic package. PNP complement: 2PB709AW. MARKING Note 1. * = -: made in Hong Kong. * = t: made in Malaysia. PINNING TYPE NUMBER MARKING CODE(1) 2PD601AQW *6D 2PD601ARW *6E 2PD601ASW *6F PIN DESCRIPTION 1 base 2 emitter 3 collector handbook, halfpage 2 3 1 MAM062 3 2 1 Top view Fig.1 Simplified outline SC-70 (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. For mounting conditions, see “Thermal considerations and footprint design for SOT323 in the General Part of Data Handbook SC18”. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 6V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
Аналогичный номер детали - 2PD601AS |
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Аналогичное описание - 2PD601AS |
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