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2SC4626J датащи(PDF) 1 Page - Panasonic Semiconductor |
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2SC4626J датащи(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page Transistors 1 Publication date: December 2002 SJC00281BED 2SC4626J Silicon NPN epitaxial planar type For high-frequency amplification ■ Features • Optimum for RF amplification of FM/AM radios • High transition frequency f T • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing ■ Absolute Maximum Ratings T a = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 5V Collector current IC 30 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Parameter Symbol Conditions Min Typ Max Unit Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, I E = 0 0.1 µA Forward current transfer ratio * hFE VCB = 10 V, IE = −1 mA 70 220 Transition frequency fT VCB = 10 V, IE = −1 mA, f = 200 MHz 150 250 MHz Noise figure NF VCB = 10 V, I E = −1 mA, f = 5 MHz 2.8 4.0 dB Reverse transfer impedance Zrb VCB = 10 V, IE = −1 mA, f = 2 MHz 22 50 Ω Common-emitter reverse transfer Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz 0.9 1.5 pF capacitance ■ Electrical Characteristics T a = 25°C ± 3°C Rank B C No-rank hFE 70 to 140 110 to 220 70 to 220 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Unit: mm Marking Symbol: V 0.27±0.02 3 12 0.12 +0.03 –0.01 5˚ 1.60 +0.05 –0.03 1.00±0.05 (0.50)(0.50) 1: Base 2: Emitter 3: Collector EIAJ: SC-89 SSMini3-F1 Package Product of no-rank is not classified and have no indication for rank. |
Аналогичный номер детали - 2SC4626J |
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Аналогичное описание - 2SC4626J |
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