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FDS6681Z датащи(PDF) 3 Page - Fairchild Semiconductor |
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FDS6681Z датащи(HTML) 3 Page - Fairchild Semiconductor |
3 / 6 page FDS6681Z Rev B (W) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –2.1 A (Note 2) –0.7 –1.2 V tRR Reverse Recovery Time IF = –20 A, 125 ns QRR Reverse Recovery Charge dIF/dt = 100 A/µs (Note 2) 94 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W (10 sec) 62.5°C/W steady state when mounted on a 1in 2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in 2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. |
Аналогичный номер детали - FDS6681Z |
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Аналогичное описание - FDS6681Z |
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