поискавой системы для электроныых деталей |
|
IRF2805S датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
IRF2805S датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRF2805S · FEATURES · With TO-263( D2PAK ) packaging · High speed switching · Low gate input resistance · Standard level gate drive · Easy to use · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Power supply · Switching applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGSS Gate-Source Voltage ± 20 V ID Drain Current-Continuous;Tc=25℃ Tc=100℃ 135 96 A IDM Drain Current-Single Pulsed 700 A PD Total Dissipation 200 W Tj Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.75 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 40 ℃ /W |
Аналогичный номер детали - IRF2805S |
|
Аналогичное описание - IRF2805S |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |