поискавой системы для электроныых деталей |
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IPB083N10N3 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IPB083N10N3 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 Isc N-Channel MOSFET Transistor IPB083N10N3 · FEATURES · With To-263(D2PAK) package · Low input capacitance and gate charge · Low gate input resistance · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Switching applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ± 20 V ID Drain Current-ContinuousTc=25℃ Tc=100℃ 80 58 A IDM Drain Current-Single Pulsed 320 A PD Total Dissipation @TC=25℃ 125 W Tch Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 1.2 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 50 ℃ /W |
Аналогичный номер детали - IPB083N10N3 |
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Аналогичное описание - IPB083N10N3 |
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