©

2000

MOS FIELD EFFECT TRANSISTOR

2SJ605

SWITCHING

P-CHANNEL POWER MOS FET

INDUSTRIAL USE

DATA SHEET

Document No. D14650EJ2V0DS00 (2nd edition)

Date Published May 2001 NS CP(K)

Printed in Japan

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

The mark

!

!

!

! shows major revised points.

DESCRIPTION

The 2SJ605 is P-channel MOS Field Effect Transistor designed

for high current switching applications.

FEATURES

• Super low on-state resistance:

• Low input capacitance

• Built-in gate protection diode

–60

V

V

A

Drain Current (pulse)

Note1

A

100

W

1.5

W

Channel Temperature

150

°C

Storage Temperature

–55 to +150

°C

Single Avalanche Current

Note2

–45

A

Single Avalanche Energy

Note2

203

mJ

Notes 1. PW

≤ 10

µs, Duty cycle ≤ 1%

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SJ605

TO-220AB

2SJ605-S

TO-262

2SJ605-ZJ

TO-263

2SJ605-Z

TO-220SMD

Note

Note TO-220SMD package is produced only

in Japan.

(TO-220AB)

(TO-262)

(TO-263, TO-220SMD)

!

!