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FDS7288N3 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS7288N3 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page February 2004 2004 Fairchild Semiconductor Corporation FDS7288N3 Rev C1 (W) FDS7288N3 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET in the thermally enhanced SO8 FLMP package has been designed specifically to improve the overall efficiency of DC/DC converters. Providing a balance of low RDS(ON) and Qg it is ideal for synchronous rectifier applications in both isolated and non-isolated topologies. It is also well suited for both high and low side switch applications in Point of Load converters. Applications • Secondary side Synchronous rectifier • Synchronous Buck VRM and POL Converters Features • 20.5 A, 30 V RDS(ON) = 4.5 mΩ @ VGS = 10 V RDS(ON) = 5.6 mΩ @ VGS = 4.5 V • High performance trench technology for extremely low RDS(ON) • Low Qg and Rg for fast switching • SO-8 FLMP for enhanced thermal performance in an industry-standard package outline. 4 5 3 6 2 7 1 8 Bottom-side Drain Contact Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) 20 A – Pulsed 60 PD Power Dissipation for Single Operation (Note 1a) 3.0 (Note 1b) 1.5 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 0.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS7288N3 FDS7288N3 13’’ 12mm 2500 units |
Аналогичный номер детали - FDS7288N3 |
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Аналогичное описание - FDS7288N3 |
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