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2SC2885 датащи(PDF) 1 Page - NEC |
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2SC2885 датащи(HTML) 1 Page - NEC |
1 / 6 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. 1998 © Document No. D16135EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan SILICON TRANSISTORS 2SC2885, 2946, 2946(1) NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING DATA SHEET 2002 The 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a small package (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DC converters and switching regulators. There are three types of transistors selectable according to the reliability requirments: 2SC2946 and 2946(1) for industrial use, 2SC2885 for general use. The 2SC2946(1) is produced with leads so as to enable mounting directly in a hybrid IC. QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25 °°°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 330 V Collector to emitter voltage VCEO 200 V Emitter to base voltage VEBO 7.0 V Collector current (DC) IC(DC) 2.0 A Collector current (pulse) IC(pulse)*4.0 A Base current (DC) IB(DC) 1.0 A Total power dissipation PT (Tc = 25 °C) 15 W Total power dissipation PT (Ta = 25 °C) 600 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C *PW ≤ 300 µs, duty cycle ≤ 10% |
Аналогичный номер детали - 2SC2885 |
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Аналогичное описание - 2SC2885 |
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