поискавой системы для электроныых деталей |
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2SK3458-S датащи(PDF) 7 Page - NEC |
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2SK3458-S датащи(HTML) 7 Page - NEC |
7 / 8 page Data Sheet D14755EJ1V0DS 7 2SK3458 PACKAGE DRAWINGS (Unit: mm) 1) TO-220AB (MP-25) 2) TO-262 (MP-25 Fin Cut) 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 3 10.6 MAX. 10.0 TYP. 3.6±0.2 4 1.3±0.2 0.75±0.1 2.54 TYP. 2.54 TYP. 1.3±0.2 0.5±0.2 2.8±0.2 φ 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 3 10 TYP. 1.3±0.2 0.75±0.3 2.54 TYP. 2.54 TYP. 1.3±0.2 0.5±0.2 2.8±0.2 4 3) TO-263 (MP-25ZK) 10.0±0.2 2.54 0.7±0.15 123 4 4.45±0.2 1.3±0.2 0.5±0.2 0 to 8o 1.Gate 2.Drain 3.Source 4.Fin (Drain) 0.4 No plating 8.4 TYP. 0.025 to 0.25 0.25 EQUIVALENT CIRCUIT Source (S) Body Diode Gate (G) Drain (D) Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. |
Аналогичный номер детали - 2SK3458-S |
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Аналогичное описание - 2SK3458-S |
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