SEMIX151GAL12E4S_13 datasheet(2/5 Pages) SEMIKRON

номер детали	SEMIX151GAL12E4S

подробное описание детали	Trench IGBT Modules

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SEMiX151GAL12E4s

2

Rev. 3 – 03.07.2013

td(on)

VCC = 600 V

IC =150 A

VGE =±15 V

RG on =1 

RG off =1 

di/dton = 3900 A/µs

di/dtoff =2000 A/µs

Tj =150 °C

204

ns

tr

Tj =150 °C

42

ns

Eon

Tj =150 °C

16.6

mJ

td(off)

Tj =150 °C

468

ns

tf

Tj =150 °C

91

ns

Eoff

Tj =150 °C

18.4

mJ

Rth(j-c)

per IGBT

0.19

K/W

Inverse diode

VF = VEC

IF = 150 A

VGE =0 V

chiplevel

Tj =25 °C

2.1

2.46

V

Tj =150 °C

2.1

2.4

V

VF0

chiplevel

Tj =25 °C

1.1

1.3

1.5

V

Tj =150 °C

0.7

0.9

1.1

V

rF

chiplevel

Tj =25 °C

4.3

5.6

6.4

m

Tj =150 °C

6.7

7.8

8.5

m

IRRM

IF = 150 A

di/dtoff =3400 A/µs

VGE =-15 V

VCC = 600 V

Tj =150 °C

115

A

Qrr

Tj =150 °C

23

µC

Err

Tj =150 °C

8.9

mJ

Rth(j-c)

per diode

0.31

K/W

Freewheeling diode

VF = VEC

IF = 150 A

VGE =0 V

chiplevel

Tj =25 °C

2.1

2.46

V

Tj =150 °C

2.1

2.4

V

VF0

chiplevel

Tj =25 °C

1.1

1.3

1.5

V

Tj =150 °C

0.7

0.9

1.1

V

rF

chiplevel

Tj =25 °C

4.3

5.6

6.4

m

Tj =150 °C

6.7

7.8

8.5

m

IRRM

IF = 150 A

di/dtoff =3400 A/µs

VGE =-15 V

VCC = 600 V

Tj =150 °C

115

A

Qrr

Tj =150 °C

23

µC

Err

Tj =150 °C

8.9

mJ

Rth(j-c)

per diode

0.31

K/W

Module

LCE

16

nH

RCC'+EE'

res., terminal-chip

TC =25°C

0.7

m

TC =125 °C

1m

Rth(c-s)

per module

0.075

K/W

Ms

to heat sink (M5)

3

5

Nm

Mt

to terminals (M6)

2.5

5

Nm

w

145

g

Temperature Sensor

R100

Tc=100°C (R25=5 k)

493 ± 5%



B100/125

R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];

3550

±2%

K

Characteristics

Symbol

Conditions

min.

typ.

max.

Unit

SEMiX® 1s

GAL

Trench IGBT Modules

SEMiX151GAL12E4s

Features

• Homogeneous Si

• Trench = Trenchgate technology

•VCE(sat) with positive temperature

coefficient

• High short circuit capability

• UL recognized, file no. E63532

Typical Applications*

•AC inverter drives

•UPS

• Electronic Welding

Remarks

• Case temperature limited to TC=125°C

max.

• Product reliability results are valid for

Tj=150°C

Аналогичный номер детали - SEMIX151GAL12E4S_13

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Semikron International	SEMIX151GAL12E4S	334Kb / 5P	Trench IGBT Modules

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