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DAM20N30S датащит (Datasheet) 2 Page - DACO SEMICONDUCTOR CO.,LTD.

№ деталь DAM20N30S
подробность  N-Channel Enhancement Mode MOSFET
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производитель  DACO [DACO SEMICONDUCTOR CO.,LTD.]
домашняя страница  http://www.dacosemi.com/
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Electrical Characteristics @ TJ =25°C (unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
OFF Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V
IDS=250uA
30
-
-
V
Zero Gate Voltage Drain Current
IDSS
VGS=0V
VDS=30V
-
-
1
uA
Gate-Body Leakage
IGSS
VGS=±20V
VDS=0V
-
-
±100
nA
ON Characteristics
Gate Threshold Voltage
VTH
VDS=VGS
IDS=250uA
1.2
1.6
2.5
V
Static Drain-Source On-Resistance
RDS(on)
VGS=10V
IDS=10A
-
5
6
Dynamic Characteristics
Input Capacitance
Ciss
VDS=25V
VGS=0V
Freq.=1MHz
-
1160
1900
pF
Output Capacitance
Coss
-
200
400
Reverse Transfer Capacitance
Crss
-
180
360
Switching Characteristics
Turn-On Delay Time
Td(on)
VDD=15V
VGS=10V
RG =
3.3Ω
IDS=15A
-
7.5
15
ns
Rise Time
Tr
-
14.5
28
Turn-Off Delay Time
Td(off)
-
35.2
60
Fall Time
Tf
-
9.6
19
Total Gate Charge
Qg
VDS=15V
VGS=4.5V
IDS=20A
-
11.1
22
nC
Gate to Source Charge
Qgs
-
1.85
3.7
Gate to Drain Charge
Qgd
-
6.8
13
Drain-Source Diode Characteristics
Diode Forward Voltage
VSD
VGS=0V
IS=1A
-
-
1
V
Notes:
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2%.
2. R
R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air.
Aug.2018
DAM20N30S




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