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WS7916S датащит (Datasheet) 4 Page - Will Semiconductor Ltd.

№ деталь WS7916S
подробность  CMOS High Gain GPS LNA
скачать  6 Pages
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производитель  WILLSEMI [Will Semiconductor Ltd.]
домашняя страница  http://www.willsemi.com/index.php?siteid=2
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WS7916S
Will Semiconductor Ltd.
4
Jun, 2017 - Rev. 1.3
Electrical Characteristics
1550
MHz ≤ f ≤ 1615 MHz; V
CC = 2.8 V; VEN > 1.2 V; Temp = 25C; input matched to 50 Ω with a 10 nH
inductor; The condition is applied unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICC
Supply current
On state
6.9
mA
Off state
3
μA
Gp
Power gain
f = 1575 MHz
16.5
dB
RLin
Input return loss
f = 1575 MHz
8
dB
RLout
Output return loss
f = 1575 MHz
13.0
dB
ISL
Reverse isolation
f = 1575 MHz
24.0
dB
NF
Noise figure
[1]
f = 1575 MHz
0.65
dB
IP1dB
Input power at 1 dB gain
compression
f = 1575 MHz
-5.5
dBm
O-IIP3
Out-of-band Input
third-order intercept point
[2]
+8.0
dBm
K
Rollett stability factor
[3]
1
ton
Turn-on time
5
μs
toff
Turn-off time
5
μs
1550 MHz ≤ f ≤ 1615 MHz; V
CC = 1.8 V; VEN > 1.2 V; Temp = 25C; input matched to 50 Ω with a 10 nH
inductor; The condition is applied unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICC
Supply current
On state
5
mA
Off state
3
μA
Gp
Power gain
f = 1575 MHz
15.5
dB
RLin
Input return loss
f = 1575 MHz
7.5
dB
RLout
Output return loss
f = 1575 MHz
13.0
dB
ISL
Reverse isolation
f = 1575 MHz
24.0
dB
NF
Noise figure
[1]
f = 1575 MHz
0.7
dB
IP1dB
Input power at 1 dB gain
compression
f = 1575 MHz
-9.0
dBm
O-IIP3
Out-of-band Input
third-order intercept point
[2]
+8.0
dBm
K
Rollett stability factor
[3]
1
ton
Turn-on time
5
μs
toff
Turn-off time
5
μs
[1] Including PCB loss (PCB loss: 0.05-0.1 dB @ 1.575 GHz)
[2] f1 = 1713 MHz, f2 = 1851 MHz, Pin = -20 dBm
[3] 10M~20GHz




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