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WS7931DB датащит (Datasheet) 1 Page - Will Semiconductor Ltd.

№ деталь WS7931DB
подробность  CMOS Medium Band LTE LNA
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производитель  WILLSEMI [Will Semiconductor Ltd.]
домашняя страница  http://www.willsemi.com/index.php?siteid=2
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WS7931DB
Will Semiconductor Ltd.
1
Aug, 2018 _ Rev. 1.5
WS7931DB
CMOS Medium Band LTE LNA
Descriptions
The WS7931DB is a low noise amplifier (LNA) with a
bypass switch for LTE receiver applications, available
in a small 6-pin DFN package. The WS7931DB
requires only one external inductor for input matching.
The WS7931DB is designed to achieve low power
dissipation and good performance. It is designed and
optimized for the LTE medium band: 1805MHz to
2200MHz.
Features
Operating frequency: 1805 MHz to 2200 MHz
Noise figure = 0.80 dB
Power Gain = 13.5 dB
Insertion Loss in bypass mode = 3.0 dB
Gain mode in-band input IP3 = +4.0 dBm
Gain mode input 1 dB compression point = -8.5
dBm
Bypass mode in-band input IP3 = +27 dBm
Bypass mode input 1 dB compression point =
+4.5 dBm
Supply voltage: 1.8 V to 3.1 V
Integrated supply decoupling capacitor
Gain mode current: 6.8 mA
Bypass mode current < 10
μA
One external matching inductor required
Output decoupled to ground
ESD protection: HBM > 2.0KV for all pins
Integrated output matching
Package: 6-pin DFN, 1.1 x 0.7 x 0.55 mm3
Process: CMOS
Applications
Cell phones
Tablets
Other RF front-end modules
http//:www.sh-willsemi.com
DFN1107-6L (Bottom view)
Pin configuration (Top view)
I
= Device code
*
= Month code(A~Z)
Marking (Top view)
Order information
Device
Package
Shipping
WS7931DB-6/TR
DFN1107-6L
10000/Reel&Tape
1
2
3
4
5
6
GND
VCC
RFOUT
GNDRF
RFIN
EN
I*




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