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SI91821DH-50-T1 датащи(PDF) 3 Page - Vishay Siliconix |
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SI91821DH-50-T1 датащи(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Si91821 Vishay Siliconix Document Number: 71614 S-51147–Rev. E, 20-Jun-05 www.vishay.com 3 SPECIFICATIONS Limits −40 to 85_C Test Conditions Unless Otherwise Specified VIN = VOUT(nom) + 1 V, IOUT = 1 mA CIN = 2.2 mF, COUT = 2.2 mF, VSD = 1.5 V Parameter Unit Maxb Typc Minb Tempa Test Conditions Unless Otherwise Specified VIN = VOUT(nom) + 1 V, IOUT = 1 mA CIN = 2.2 mF, COUT = 2.2 mF, VSD = 1.5 V Symbol Dynamic Line Regulation DVO(line) VIN : VOUT(nom) + 1 V to VOUT(nom) + 2 V tr/tf = 5 ms, IOUT = 250 mA Room 10 mV Dynamic Load Regulation DVO(load) IOUT : 1 mA to 150 mA, tr/tf = 2 ms Room 30 mV Turn-on Overshoot DVOOS VIN followed by SD = High Event CNOISE v 100 nF Room 2.5 % VOUT Turn-On-Time tON COUT = 10 mF, VOUT to 90% of final value, VIN = 3.6 V Room 350 mS Thermal Shutdown Thermal Shutdown Junction Temp TJ(s/d) Room 165 _C Thermal Hysteresis THYST Room 20 _C Short Circuit Current ISC VOUT = 0 V Room 800 mA Shutdown Input SD Input Voltage VIH High = Regulator ON (Rising) Full 1.5 VIN V SD Input Voltage VIL Low = Regulator OFF (Falling) Full 0.4 V SD Input Currente IIH VSD = 0 V, Regulator OFF Room 0.01 mA SD Input Currente IIL VSD = 6 V, Regulator ON Room 1.0 mA Shutdown Hysteresis VHYST Full 100 mV Error Output Output High Leakage IOFF ERROR = VOUT(nom) Full 0.01 2 mA Output Low Voltage VOL ISINK = 2 mA Full 0.4 Power_Good Trip Threshold f, g (Rising) VTH Full 0.93 x VOUT 0.95 x VOUT 0.97 x VOUT V Hysteresisf VHYST Room 2% x VOUT Error Delay tDELAY CNOISE v 100 nF Full 10 mS Notes a. Room = 25_C, Full = −40 to 85_C. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing and are measured at TA = 25_C. d. The dropout voltage is defined as VIN − VOUT when VOUT is 100 mV below the value of VOUT for VIN = VOUT + 2 V. This is applicable for voltages of 2.5 V or higher. e. The device’s shutdown pin includes a typical 6-MW internal pull-down resistor connected to ground. f. VOUT is defined as the output voltage of the DUT at 1 mA. g. Typical only, from VOUT = 2.0 V to VOUT = 1.5 V. |
Аналогичный номер детали - SI91821DH-50-T1 |
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Аналогичное описание - SI91821DH-50-T1 |
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