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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SM8J45A датащи(PDF) 2 Page - Toshiba Semiconductor |
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SM8J45A датащи(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page  SM8G45, SM8J45, SM8G45A, SM8J45A 2004-07-06 2 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Repetitive Peak Off−State Current IDRM VDRM = Rated, Tj = 125°C ― ― 2 mA I T2 (+), Gate (+) ― ― 2 II T2 (+), Gate (−) ― ― 2 III T2 (−), Gate (−) ― ― 2 SM8G45 SM8J45 IV T2 (−), Gate (+) ― ― ― I T2 (+), Gate (+) ― ― 1.5 II T2 (+), Gate (−) ― ― 1.5 III T2 (−), Gate (−) ― ― 1.5 Gate Trigger Voltage SM8G45A SM8J45A IV VGT VD = 12V RL = 20Ω T2 (−), Gate (+) ― ― ― V I T2 (+), Gate (+) ― ― 30 II T2 (+), Gate (−) ― ― 30 III T2 (−), Gate (−) ― ― 30 SM8G45 SM8J45 IV T2 (−), Gate (+) ― ― ― I T2 (+), Gate (+) ― ― 20 II T2 (+), Gate (−) ― ― 20 III T2 (−), Gate (−) ― ― 20 Gate Trigger Current SM8G45A SM8J45A IV IGT VD = 12V RL = 20Ω T2 (−), Gate (+) ― ― ― mA Peak On−State Voltage VTM ITM = 12A ― ― 1.5 V Gate Non−Trigger Voltage VGD VD = Rated, Tc = 125°C 0.2 ― ― V Holding Current IH VD = 12V, ITM = 1A ― ― 50 mA Thermal Resistance Rth (j−c) Junction to Case, AC ― ― 2.0 °C / W SM8G45 SM8J45 10 ― ― Critical Rate of Rise of Off− State Voltage at Commutation SM8G45A SM8J45A (dv / dt) c VDRM = 400V, (di / dt) c = −4.5A / ms Tj = 125°C 4 ― ― V / µs MARKING Part No. (or abbreviation code) Part No. M8G45 SM8G45, SM8G45A *1 M8J45 SM8J45, SM8J45A Nothing SM8G45, SM8J45 *2 M8J45A SM8G45A, SM8J45A Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. M8G45 Characteristics indicator*2 Part No. (or abbreviation code) *1 |
Аналогичный номер детали - SM8J45A |
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Аналогичное описание - SM8J45A |
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