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2N4918 датащи(PDF) 1 Page - ON Semiconductor |
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2N4918 датащи(HTML) 1 Page - ON Semiconductor |
1 / 8 page Medium-Power Plastic PNP Silicon Transistors ...designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: • Low Saturation Voltage — VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp • Excellent Power Dissipation Due to Thermopad Construction — PD = 30 W @ TC = 25_C • Excellent Safe Operating Area • Gain Specified to IC = 1.0 Amp • Complement to NPN 2N4921, 2N4922, 2N4923 *MAXIMUM RATINGS Ratings Symbol 2N4918 2N4919 2N4920 Unit Collector–Emitter Voltage VCEO 40 60 80 Vdc Collector–Base Voltage VCB 40 60 80 Vdc Emitter–Base Voltage VEB 5.0 Vdc Collector Current — Continuous (1) IC* 1.0 3.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25°C Derate above 25 _C PD 30 0.24 Watts W/ _C Operating & Storage Junction Temperature Range TJ, Tstg –65 to +150 _C THERMAL CHARACTERISTICS (2) Characteristic Symbol Max Unit Thermal Resistance, Junction to Case θJC 4.16 _C/W *Indicates JEDEC Registered Data for 2N4918 Series. (1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements. The 3.0 Amp maximum value is based upon actual current–handling capability of the device (See Figure 5). (2) Recommend use of thermal compound for lowest thermal resistance. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. ON Semiconductor) © Semiconductor Components Industries, LLC, 2002 April, 2002 – Rev. 10 1 Publication Order Number: 2N4918/D 2N4918 thru 2N4920 *ON Semiconductor Preferred Device 3 AMPERE GENERAL–PURPOSE POWER TRANSISTORS 40–80 VOLTS 30 WATTS * CASE 77–09 TO–225AA TYPE 3 2 1 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE |
Аналогичный номер детали - 2N4918 |
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Аналогичное описание - 2N4918 |
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